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Samsung 990 PRO 2TB NVMe M.2 2280 PCI-Express 4.0 x4 Solid State Drive
R5,099.00
Or split into 4x interest-free payments Learn more
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4x instalments over 6 weeks
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Payflex lets you get what you need now, but pay for it over four interest-free instalments. You pay 25% upfront, then three payments of 25% over the following six weeks.
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Shop Online
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2
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4
Pay the remainder
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No fees.
– 2TB Storage Capacity
– M.2 2280 Form Factor
– Interface: PCI-Express Gen 4.0 x4 NVMe 2.0
– Up to 7,450MB/s Sequential Read Speed
– Up to 6,900MB/s Sequential Write Speed
– 4KB QD32 Random Read: Up to 1,400,000 IOPS
– 4KB QD32 Random Write: Up to 1,550,000 IOPS
– Samsung Magician Management Software
– Samsung Pascal Controller
– Samsung 2GB Low Power DDR4 SDRAM
– Flash Memory: Samsung V-NAND 3-bit MLC
– Up to 1.5 Million Hours Reliability (MTBF)
- Description
- WARRANTY
- Reviews (0)
Description
| SPECIFICATIONS | |
| Brand | Samsung |
| Series | 990 PRO |
| Model | MZ-V9P2T0BW |
| General | |
| Capacity | 2TB |
| Form Factor | 2280 M.2 |
| Interface | PCI-Express Gen 4.0 x4 NVMe 2.0 |
| Storage Memory | Samsung V-NAND 3-bit MLC |
| Controller | Samsung Pascal Controller |
| Cache Memory | Samsung 2GB Low Power DDR4 SDRAM |
| Dimensions | 80mm x 22mm x 2.3mm |
| Management Software | Magician Software for SSD Management |
| Key Features | |
| TRIM Support | Yes |
| S.M.A.R.T Support | Yes |
| Garbage Collection | Auto Garbage Collection Algorithm |
| Encryption Support | AES 256-bit Encryption (Class 0) TCG/Opal IEEE1667 |
| Device Sleep Mode Support | Yes |
| Performance | |
| Sequential Read | Up to 7,450 MB/s |
| Sequential Write | Up to 6,900 MB/s |
| Random Read (4KB, QD32) | Up to 1,400,000 IOPS |
| Random Write (4KB, QD32) | Up to 1,550,000 IOPS |
| Random Read (4KB, QD1) | Up to 22,000 IOPS |
| Random Write (4KB, QD1) | Up to 80,000 IOPS |
| Environment | |
| Average Power Consumption | Average: 5.5W W |
| Maximum: 8.5 W (Burst mode) | |
| Power consumption (Idle) | Max. 55 mW |
| Reliability (MTBF) | 1.5 Million Hours |
| Allowable Voltage | 3.3 V ± 5 % |
| Operating Temperature | 0°C – 70°C |
| Shock | 1,500 G & 0.5 ms |
Limited 5 Years or 1,200 TBW
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